www.belling.com.cn v2.0 page1 blm 230 5 pb free product p-channel enhancement mode power mosfet description the BLM2305 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. general features v ds = -20v,i d = -4.1a r ds(on) <75m @ v gs =-2.5v r ds(on) < 52m @ v gs =-4.5v high power and current handing capability lead free product is acquired surface mount package application pwm applications load switch power management d g s schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity 2305 BLM2305 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v drain current -continuous i d -4.1 a drain current -pulsed (note 1) i dm -15 a maximum power dissipation p d 1.7 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 74 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -20 - - v zero gate voltage drain current i dss v ds =-20v,v gs =0v - - -1 a
www.belling.com.cn v2.0 page2 blm 230 5 pb free product gate-body leakage current i gss v gs =8v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -0.45 -0.7 -1.0 v v gs =-4.5v, i d =-4.1a - 45 52 drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-3a - 60 75 m forward transconductance g fs v ds =-5v,i d =-3.5a - 8.5 - s dynamic characteristics (note4) input capacitance c lss - 740 - pf output capacitance c oss - 290 - pf reverse transfer capacitance c rss v ds =-4v,v gs =0v, f=1.0mhz - 190 - pf switching characteristics (note 4) turn-on delay time t d(on) - 12 - ns turn-on rise time t r - 35 - ns turn-off delay time t d(off) - 30 - ns turn-off fall time t f v dd =-4v,i d =-3.3a , r l =-1.2 ,v gen =-4.5v,r g =1 - 10 - ns total gate charge q g - 7.8 - nc gate-source charge q gs - 1.2 - nc gate-drain charge q gd v ds =-4v,i d =-4.1a,v gs =-4.5v - 1.6 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-1.6a - - -1.2 v diode forward current (note 2) i s - - 1.6 a notes: 1. repetitive rating: pulse width limited by maximum j unction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production
www.belling.com.cn v2.0 page3 blm 230 5 pb free product typical electrical and thermal characteristics figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance( ) i d - drain current (a)
www.belling.com.cn v2.0 page4 blm 230 5 pb free product vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance( ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a)
www.belling.com.cn v2.0 page5 blm 230 5 pb free product vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impe dance r(t),normalized effective transient thermal impedance i d - drain current (a)
www.belling.com.cn v2.0 page6 blm 230 5 pb free product sot-23 package information dimensions in millimeters (unit:mm) dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise speci fied 3. package body sizes exclude mold flash and gate b urrs. mold flash at the non-lead sides should be le ss than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted i nch dimensions are not necessarily exact.
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